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| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE FX20VSJ-3 OUTLINE DRAWING 1.5 max 4 Dimensions in mm 4.5 1.3 10.5 max 1.5 max 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 +0.3 -0 1 5 0.8 B 0.5 1 2 3 3 2.6 0.4 * 4V DRIVE * VDSS ............................................................ -150V * rDS (ON) (MAX) ................................................ 0.29 * ID ................................................................... -20A * Integrated Fast Recovery Diode (TYP.) ........ 100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 TO-220S MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings -150 20 -20 -80 -20 -20 -80 70 -55 ~ +150 -55 ~ +150 4.5 GATE DRAIN SOURCE DRAIN Unit V V A A A A A W C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 1.2 (1.5) P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -150V, VGS = 0V ID = -1mA, VDS = -10V ID = -10A, VGS = -10V ID = -10A, VGS = -4V ID = -10A, VGS = -10V ID = -10A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -150 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.23 0.25 -2.3 17.5 4470 248 115 15 42 273 114 -1.0 -- 100 Max. -- 0.1 -0.1 -2.0 0.29 0.32 -2.9 -- -- -- -- -- -- -- -- -1.5 1.79 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -80V, ID = -10A, VGS = -10V, RGEN = RGS = 50 IS = -10A, VGS = 0V Channel to case IS = -20A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 80 -7 -5 -3 -2 tw = 10s 100s 60 -101 -7 -5 -3 -2 40 1ms 10ms 20 -100 -7 -5 0 0 50 100 150 200 DC TC = 25C -3 Single Pulse -2 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 -5-7-103 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -8V -6V -4V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -8V -6V -4V -3V TC = 25C Pulse Test DRAIN CURRENT ID (A) -16 DRAIN CURRENT ID (A) -8 -12 -3V -6 -2.5V -8 PD = 70W -2.5V -4 -4 -2 0 0 -2 -4 -6 -8 -10 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 ID = -30A TC = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () -8 0.4 VGS = -4V -10V -6 -20A 0.3 -4 -10A 0.2 -2 0.1 0 0 -2 -4 -6 -8 -10 00 -10 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) -50 TC = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = -10V 7 Pulse Test 5 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) -30 FORWARD TRANSFER ADMITTANCE yfs (S) -40 101 7 5 3 2 -20 -10 0 0 -2 -4 -6 -8 -10 100 0 -10 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 TCh = 25C VDD = -80V VGS = -10V RGEN = RGS = 50 td(off) tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 102 7 5 3 2 td(on) tr Coss Crss 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 101 0 -10 101 -7 -100 -2 -3 -5 -7 -101 -2 -3 -5 -7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -20 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 TCh = 25C ID = -20A SOURCE CURRENT IS (A) -8 VDS = -50V -80V -100V -16 TC = 125C 75C 25C -6 -12 -4 -8 -2 -4 0 0 20 40 60 80 100 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = -10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) -4.0 VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 -2.4 100 7 5 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 0 7 0.2 5 3 2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 10 1.0 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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